Actividades de I+D en
IGFAE/USC
Pablo Vázquez (IGFAE-USC)
IV JORNADAS SOBRE LA PARTICIPACIÓN ESPAÑOLA EN FUTUROS ACELERADORES LINEALES
Madrid, 2-3 Diciembre 2009
R&D activities at Santiago
 R&D in pixel detectors
 R&D in microstrips silicon detectors
 DEPFET project
Belle II PXD PS system
 Sensor characterization (Lab, testbeams)
 Gamma irradiation (Co-60)
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 FTD simulations
 Personnel dedicated: 5 FTE
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Pablo Vázquez, Abraham Gallas, Daniel Esperante,
Jevgenij Visniakov, Eliseo Pérez, Javier Caride
IV jornadas FLC, Madrid, 2-3 Dec 2009
P. Vázquez
1
R&D in pixel detectors
 CERN + LHCb + Timepix/Medipix collaboration
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2 test beams summer 2009 at CERN
Telescope (6) + DUT made with Timepix
55 um pixel size
300 um thickness
Hit resolution ~5 um
Track resolution ~2.6 um
IV jornadas FLC, Madrid, 2-3 Dec 2009
P. Vázquez
2
R&D in pixel detectors
 Timepix/Medipix collaboration is working in adapting
the Timepix ASIC for HEP experiments
 Since we have obtained very good results in testbeams
The LHCb VELO upgrade group has decided to choose
the timepix as baseline pixel solution
b) LHCb + Timepix/Medipix has decided to build an
upgraded version of the Timepix telescope
a)
IV jornadas FLC, Madrid, 2-3 Dec 2009
P. Vázquez
3
R&D in pixel detectors
a) USC in collaboration with the CNM, Glasgow and CERN are
building thinned pixel detectors
2D sensors thinned up to 200, 150 and 100 um
 To be readout with the Timepix and characterized as
function of the thickness
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Charge sharing
Efficiency
Time of arrival measurements
Sensors are being produced now
 Bumpbonding tryout also in the CNM
 Possible design variations under discussion
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Elongated pixels at 1st row, edgless, gard rings
IV jornadas FLC, Madrid, 2-3 Dec 2009
P. Vázquez
4
R&D in pixel and microstrips silicon sensors
b) Telescope based on Timepix with following
characteristics
Active area: 2.8x2.8 cm2
 Resolucion: 2 um, 1 ns
 Readout rate: 75 kHz
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To be used in R&D in detectors for ILC or LHC upgrades
with the contribution of the USC
Timing Unit, integration of the DUT daq in the DAQ of the
telescope
Mechanics of the DUT
Cold box to work with irradiated sensors in the test beam
IV jornadas FLC, Madrid, 2-3 Dec 2009
P. Vázquez
5
R&D in microstrips silicon detectors
 In case the pixel option cannot meet the physics and time
scale requirements, the silicon strip option should hold for
LHCb VELO upgrade
 The strip option should stay as close as possible to the
current design improving its performance
40 MHz readout
 Higher granularity (x10 luminosity increase)
 Impact Parameter resolution
 Radiation hardness
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 USC wants to participate in the design and characterization
of the new sensors, in the module assembly and tests with
particle beams at CERN
 Very useful for the FTD conception of ILC
IV jornadas FLC, Madrid, 2-3 Dec 2009
P. Vázquez
6
R&D in microstrips silicon detectors
 1 module assembled in Santiago to be tested in the lab and
in testbeam
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IT hybrid (3 beetles) + 2 pitch adapters + PR01 Hamamatsu
sensor
IV jornadas FLC, Madrid, 2-3 Dec 2009
P. Vázquez
7
DEPFET: Belle II PXD PS system
22 x half-module
50cm
IV jornadas FLC, Madrid, 2-3 Dec 2009
 44 half-modules
 17 voltages per
half-module
 Regulation cards
on radiation and
B-field
enviroment
2m
P. Vázquez
8
DEPFET: Belle II PXD PS system
Belle layout
750 voltages
~krad + H field
1500 lines
Regul.
DHH
DHH
Regul.
PXD
PS
> 500W
IV jornadas FLC, Madrid, 2-3 Dec 2009
P. Vázquez
PS
Electronics hut
No radiation
9
DEPFET: sensor characterization
 Lab test
Gain (radioactive source), charge collection (laser)
 Dependence with radiation
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241Am
source on a
PXD5 matrix
IV jornadas FLC, Madrid, 2-3 Dec 2009
P. Vázquez
10
DEPFET: sensor characterization
 Testbeams
TB09 data taking and analysis
 Future testbeams
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Irradiated module
Power supply prototype
IV jornadas FLC, Madrid, 2-3 Dec 2009
P. Vázquez
11
DEPFET: 2009 test beam analysis
Eutelescope framework installed,
some procesors working
IV jornadas FLC, Madrid, 2-3 Dec 2009
P. Vázquez
12
Gamma irradiation
 Failed depfet PXD5 module irradiation this summer
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Module dead before irradiation
 PXD5 matrices being tested in Karlsruhe and Santiago
Dec 09 up to 10Mrad
 PXD6 matrices will be irradiated next year
IV jornadas FLC, Madrid, 2-3 Dec 2009
P. Vázquez
13
ASIC development
 In collaboration with Grupo de Vision Artificial at USC a
project was submitted to Xunta de Galicia to produce in
Tezzaron, using TSVs, a 3D pixel readout chip
demonstrator for HEP applications
CMOS 3D 130nm technology
 64x64 pixels of 40x40 um pixel size
 4 layers
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Sensor: pn diode
Signal conditioning: amplification, test pulse, comparator
Signal processing: time stamping, counter, time over
threshold, 8bit memory
Readout
 Possible incorporation to R&D for FLC project in 2013
IV jornadas FLC, Madrid, 2-3 Dec 2009
P. Vázquez
14
Summary on R&D activities in the USC
 R&D in pixel detectors
 R&D in microstrips silicon detectors
 DEPFET project
Belle II PXD PS system
 Sensor characterization (Lab, testbeams)
 Gamma irradiation (Co-60)

 FTD simulations
IV jornadas FLC, Madrid, 2-3 Dec 2009
P. Vázquez
15
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Actividades de I+D en IGFAE/USC